Dr. Ruirui Chen of the University of Tennessee will present a seminar on the topic, “Medium Voltage Power Converter Development for Grid Applications Using 10 kV SiC MOSFETS.”
Abstract: The 10 kV SiC MOSFET is an emerging wide-bandgap power semiconductor technology that has attracted increasing attention for medium voltage (MV) applications. Compared with Si IGBT based MV converter counterparts, the 10 kV SiC device based MV converters offer substantially higher efficiency, increased power density, wider control bandwidth, as well as simplified converter topologies and control strategies. This talk will provide an overview of the characteristics and advantages of 10 kV SiC MOSFETs for grid applications. It will also present case studies on the development of 10 kV SiC MOSFETs based MV converters for 13.8 kV grids, highlighting key design considerations, experimental validation, and application potential.
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Biography: Dr. Ruirui Chen is a Research Assistant Professor with the Department of Electrical Engineering and Computer Science, the University of Tennessee, Knoxville, USA. His research interests include wide bandgap devices and applications, medium voltage power electronics, cryogenic power electronics, multilevel converters, and high power high density converters and circuit breakers for electrified transportation and grid applications. He has authored or co-authored one book, one book chapter, and >80 IEEE journal and conference papers. His work has been recognized with two prize paper awards from the IEEE Power Electronics Society and the IEEE Industry Applications Society. He also received the outstanding reviewer for IEEE Transactions on Power Electronics, the star reviewer for IEEE Journal of Emerging and Selected Topics in Power Electronics, and recognized Top 2% Scientists on the Stanford-Elsevier’s list.
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